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Other articles related with "interface trap"：
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128502 |
Wei-Tai Gong(巩伟泰), Yan Li(李闫), Ya-Bin Sun(孙亚宾), Yan-Ling Shi(石艳玲), and Xiao-Jin Li(李小进) |
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Investigation of degradation and recovery characteristics of NBTI in 28-nm high-k metal gate process |
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Chin. Phys. B
2023 Vol.32 (12): 128502-128502
[Abstract]
(105)
[HTML 0 KB]
[PDF 823 KB]
(27)
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57305 |
Wen-Hao Zhang(张文浩), Ma-Guang Zhu(朱马光), Kang-Hua Yu(余康华), Cheng-Zhan Li(李诚瞻),Jun Wang(王俊), Li Xiang(向立), and Yu-Wei Wang(王雨薇) |
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Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms |
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Chin. Phys. B
2023 Vol.32 (5): 57305-057305
[Abstract]
(173)
[HTML 1 KB]
[PDF 917 KB]
(195)
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77303 |
Peng Liu(刘鹏), Ji-Long Hao(郝继龙), Sheng-Kai Wang(王盛凯), Nan-Nan You(尤楠楠), Qin-Yu Hu(胡钦宇), Qian Zhang(张倩), Yun Bai(白云), and Xin-Yu Liu(刘新宇) |
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Impact of O2 post oxidation annealing on the reliability of SiC/SiO2 MOS capacitors |
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Chin. Phys. B
2021 Vol.30 (7): 77303-077303
[Abstract]
(479)
[HTML 1 KB]
[PDF 652 KB]
(102)
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58101 |
Yu Fu(付裕), Rui-Min Xu(徐锐敏), Xin-Xin Yu(郁鑫鑫), Jian-Jun Zhou(周建军), Yue-Chan Kong(孔月婵), Tang-Sheng Chen(陈堂胜), Bo Yan(延波), Yan-Rong Li(李言荣), Zheng-Qiang Ma(马正强), and Yue-Hang Xu(徐跃杭) |
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Enhanced interface properties of diamond MOSFETs with Al2O3 gate dielectric deposited via ALD at a high temperature |
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Chin. Phys. B
2021 Vol.30 (5): 58101-058101
[Abstract]
(558)
[HTML 1 KB]
[PDF 1096 KB]
(100)
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107302 |
Si-Qi Jing(荆思淇), Xiao-Hua Ma(马晓华), Jie-Jie Zhu(祝杰杰)†, Xin-Chuang Zhang(张新创), Si-Yu Liu(刘思雨), Qing Zhu(朱青), and Yue Hao(郝跃) |
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Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments |
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Chin. Phys. B
2020 Vol.29 (10): 107302-
[Abstract]
(591)
[HTML 1 KB]
[PDF 1123 KB]
(78)
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97301 |
Ji-Long Hao(郝继龙), Yun Bai(白云), Xin-Yu Liu(刘新宇), Cheng-Zhan Li(李诚瞻), Yi-Dan Tang(汤益丹), Hong Chen(陈宏), Xiao-Li Tian(田晓丽), Jiang Lu(陆江), Sheng-Kai Wang(王盛凯) |
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Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation |
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Chin. Phys. B
2020 Vol.29 (9): 97301-097301
[Abstract]
(566)
[HTML 0 KB]
[PDF 547 KB]
(59)
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37301 |
Xin-Yu Liu(刘新宇), Ji-Long Hao(郝继龙), Nan-Nan You(尤楠楠), Yun Bai(白云), Yi-Dan Tang(汤益丹), Cheng-Yue Yang(杨成樾), Sheng-Kai Wang(王盛凯) |
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High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation |
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Chin. Phys. B
2020 Vol.29 (3): 37301-037301
[Abstract]
(771)
[HTML 1 KB]
[PDF 1104 KB]
(247)
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67304 |
Si-Qin-Gao-Wa Bao(包斯琴高娃), Xiao-Hua Ma(马晓华), Wei-Wei Chen(陈伟伟), Ling Yang(杨凌), Bin Hou(侯斌), Qing Zhu(朱青), Jie-Jie Zhu(祝杰杰), Yue Hao(郝跃) |
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Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2019 Vol.28 (6): 67304-067304
[Abstract]
(841)
[HTML 1 KB]
[PDF 591 KB]
(197)
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37102 |
Yunliang Yue(乐云亮), Yu Song(宋宇), Xu Zuo(左旭) |
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First-principles investigations of proton generation in α-quartz |
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Chin. Phys. B
2018 Vol.27 (3): 37102-037102
[Abstract]
(654)
[HTML 1 KB]
[PDF 4927 KB]
(321)
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108503 |
Yan Zeng(曾严), Xiao-Jin Li(李小进), Jian Qing(卿健), Ya-Bin Sun(孙亚宾), Yan-Ling Shi(石艳玲), Ao Guo(郭奥), Shao-Jian Hu(胡少坚) |
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Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models |
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Chin. Phys. B
2017 Vol.26 (10): 108503-108503
[Abstract]
(631)
[HTML 1 KB]
[PDF 701 KB]
(265)
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37104 |
Wenbo Li(李文波), Ling Li(李玲), Fangfang Wang(王方方), Liu Zheng(郑柳), Jinghua Xia(夏经华), Fuwen Qin(秦福文), Xiaolin Wang(王晓琳), Yongping Li(李永平), Rui Liu(刘瑞), Dejun Wang(王德君), Yan Pan(潘艳), Fei Yang(杨霏) |
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Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study |
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Chin. Phys. B
2017 Vol.26 (3): 37104-037104
[Abstract]
(713)
[HTML 1 KB]
[PDF 1782 KB]
(590)
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87305 |
Hao Xu(徐昊), Hong Yang(杨红), Wei-Chun Luo(罗维春), Ye-Feng Xu(徐烨峰), Yan-Rong Wang(王艳蓉), Bo Tang(唐波), Wen-Wu Wang(王文武), Lu-Wei Qi(祁路伟), Jun-Feng Li(李俊峰), Jiang Yan(闫江), Hui-Long Zhu(朱慧珑), Chao Zhao(赵超), Da-Peng Chen(陈大鹏), Tian-Chun Ye(叶甜春) |
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Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations |
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Chin. Phys. B
2016 Vol.25 (8): 87305-087305
[Abstract]
(601)
[HTML 1 KB]
[PDF 1174 KB]
(560)
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126701 |
Guan He (关赫), Lv Hong-Liang (吕红亮), Guo Hui (郭辉), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Wu Li-Fan (武利翻) |
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Interfacial and electrical characteristics of a HfO2/n-InAlAs MOS-capacitor with different dielectric thicknesses |
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Chin. Phys. B
2015 Vol.24 (12): 126701-126701
[Abstract]
(587)
[HTML 1 KB]
[PDF 305 KB]
(414)
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78502 |
Chen Hai-Feng (陈海峰), Guo Li-Xin (过立新), Zheng Pu-Yang (郑璞阳), Dong Zhao (董钊), Zhang Qian (张茜) |
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Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor |
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Chin. Phys. B
2015 Vol.24 (7): 78502-078502
[Abstract]
(737)
[HTML 1 KB]
[PDF 364 KB]
(304)
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128502 |
Chen Hai-Feng (陈海峰) |
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Gate-modulated generation–recombination current in n-type metal–oxide–semiconductor field-effect transistor |
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Chin. Phys. B
2014 Vol.23 (12): 128502-128502
[Abstract]
(544)
[HTML 1 KB]
[PDF 368 KB]
(400)
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117304 |
Liang Bin (梁斌), Chen Jian-Jun (陈建军), Chi Ya-Qing (池雅庆) |
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Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET |
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Chin. Phys. B
2014 Vol.23 (11): 117304-117304
[Abstract]
(680)
[HTML 1 KB]
[PDF 527 KB]
(485)
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118504 |
Yun Quan-Xin (云全新), Li Ming (黎明), An Xia (安霞), Lin Meng (林猛), Liu Peng-Qiang (刘朋强), Li Zhi-Qiang (李志强), Zhang Bing-Xin (张冰馨), Xia Yu-Xuan (夏宇轩), Zhang Hao (张浩), Zhang Xing (张兴), Huang Ru (黄如), Wang Yang-Yuan (王阳元) |
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Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor |
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Chin. Phys. B
2014 Vol.23 (11): 118504-118504
[Abstract]
(628)
[HTML 1 KB]
[PDF 586 KB]
(743)
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57304 |
Zhang Yue (张月), Zhuo Qing-Qing (卓青青), Liu Hong-Xia (刘红侠), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET |
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Chin. Phys. B
2014 Vol.23 (5): 57304-057304
[Abstract]
(539)
[HTML 1 KB]
[PDF 303 KB]
(388)
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57301 |
Liao Xue-Yang (廖雪阳), Zhang Kai (张凯), Zeng Chang (曾畅), Zheng Xue-Feng (郑雪峰), En Yun-Fei (恩云飞), Lai Ping (来萍), Hao Yue (郝跃) |
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Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique |
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Chin. Phys. B
2014 Vol.23 (5): 57301-057301
[Abstract]
(538)
[HTML 1 KB]
[PDF 386 KB]
(900)
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117311 |
Zhang Yue (张月), Pu Shi (蒲石), Lei Xiao-Yi (雷晓艺), Chen Qing (陈庆), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Effects of stress conditions on the generation of negative bias temperature instability-associated interface traps |
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Chin. Phys. B
2013 Vol.22 (11): 117311-117311
[Abstract]
(507)
[HTML 1 KB]
[PDF 402 KB]
(357)
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76701 |
Liu Chen (刘琛), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Lü Hong-Liang (吕红亮) |
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Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor |
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Chin. Phys. B
2013 Vol.22 (7): 76701-076701
[Abstract]
(549)
[HTML 1 KB]
[PDF 287 KB]
(1364)
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17301 |
Hu Bo (胡波), Huang Shi-Hua (黄仕华), Wu Feng-Min (吴锋民) |
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Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge |
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Chin. Phys. B
2013 Vol.22 (1): 17301-017301
[Abstract]
(873)
[HTML 0 KB]
[PDF 309 KB]
(1358)
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5479 |
Hu Shi-Gang(胡仕刚),Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Cao Yan-Rong(曹艳荣), Chen Chi(陈炽), and Wu Xiao-Feng(吴笑峰) |
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Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at high temperature |
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Chin. Phys. B
2009 Vol.18 (12): 5479-5484
[Abstract]
(1572)
[HTML 1 KB]
[PDF 169 KB]
(962)
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1445 |
Liu Hong-Xia(刘红侠), Li Zhong-He(李忠贺), and Hao Yue(郝跃) |
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Degradation characteristics and mechanism of PMOSFETs under NBT--PBT--NBT stress |
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Chin. Phys. B
2007 Vol.16 (5): 1445-1449
[Abstract]
(1449)
[HTML 1 KB]
[PDF 458 KB]
(833)
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833 |
Li Zhong-He (李忠贺), Liu Hong-Xia (刘红侠), Hao Yue (郝跃) |
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The role of hydrogen in negative bias temperature instability of pMOSFET |
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Chin. Phys. B
2006 Vol.15 (4): 833-838
[Abstract]
(1521)
[HTML 1 KB]
[PDF 312 KB]
(1320)
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